GATE EC Question Paper 2005.
GATE i.e. Graduate Aptitude Test in Engineering Electronics and Communication 2005 Exam has been conducted by IISc Bangalore IIT Bombay IIT Delhi IIT Guwahati IIT Kanpur IIT Kharagpur IIT Madras IIT Roorkee. This GATE EC 2005 examination is the procedure to get the admission in M.Tech
GATE Electronics and Communication i.e. EC Question Paper, This GATE EC 2005 Question will help all the students for their exam preparation, here the question type is MCQ i.e multiple choice question answers, if this GATE EC 2005 question paper in pdf file for GATE EC you can download it in FR EC, if GATE Electronics and Communication 2005 paper in text for GATE EC you can download GATE EC 2005 page also just Go to menu bar, Click on File->then Save.
GATE EC Question Paper 2005
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1.A MOS capacitor made using p type substrate is in the accumulation mode. The dominant charge in the channel is due to the presence of
(c) positively charged ions
(d) negatively charged ions
2. A device with input x(f) and output y(t) is characterized by: y(t) = x2(f). An FM signal with frequency deviation of 90 kH.z and modulating signal bandwidth of 5 kHz is applied to this device. The bandwidth of the OtlipLit signal is
(a) 370 kHz (b) 190 kl-Iz
(c) 380 kI-Iz (d) 95 kHz
3. A carrier is phase modulated (PM) with frequency deviation of 10 k[Iz by a single tone frequency of I kHz. If the single tone frequency is increased to 2 kI-fz, assuming that phase deviation remains unchanged, the bandwidth of the PM signal is
(a) 21 kI-Iz. (b) 22 kHz
(c) 42 kHz (d) 44 kHz
4 The following program starts at location O100H.
LXI SP, 00FF
LX! H, 0701
5. The content of accumulator when the program counter reaches 01 09H is
(a) 20H (b) ()21-I
(c) OOH (d) fFH