GATE EC Question Paper 2006

GATE EC Question Paper 2006.

GATE i.e. Graduate Aptitude Test in Engineering Electronics and Communication 2006 Exam has been conducted by IISc Bangalore IIT Bombay IIT Delhi IIT Guwahati IIT Kanpur IIT Kharagpur IIT Madras IIT Roorkee. This GATE EC 2006 examination is the procedure to get the admission in M.Tech

GATE Electronics and Communication i.e. EC Question Paper, This GATE EC 2006 Question will help all the students for their exam preparation, here the question type is MCQ i.e multiple choice question answers, if this GATE EC 2006 question paper in pdf file for GATE EC you can download it in FR EC, if GATE Electronics and Communication 2006 paper in text for GATE EC you can download GATE EC 2006 page also just Go to menu bar, Click on File->then Save.

GATE EC Question Paper 2006

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1 . The concentration of minority carriers in a extrinsic semiconductor tinder equilibrium is

(a) directly proportional to the doping concentration
(b) inversely proportional to the doping concentration
(c) directly proportional to the concentration
(d) inversely proportional to the intrjnsj concentration

2. Under low level injection assumptions the ecj minority carrier current for an extrinsic semiconductor is essentially the

(a) diffusion current
(b) drift current
(L) recombination current
(d) induced current

3. The phenomenon known as “Early Effect” in a bipolar transistor refers to a reduction of the effective base-width caused by

(a) electron-hole recombination at the base
(b) the reverse biasing of the base-collector junction
(c) the forward biasing of emitter-base junction
(d) the early removal of stored base charge d taring saturation-to-cutoff switching

4. The (irsi and (he last critical frequencies (singularities) of a driving point impedance function of a passive network having two kinds of elements, are a pole and a zero respectively. The above property will be satisfied by

(a) RL network only
(b) RC network only
(c) LC network only
(ci) RC as well as RL networks

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