GATE EC Question Paper 2007

GATE EC Question Paper 2007.

GATE i.e. Graduate Aptitude Test in Engineering Electronics and Communication 2007 Exam has been conducted by IISc Bangalore IIT Bombay IIT Delhi IIT Guwahati IIT Kanpur IIT Kharagpur IIT Madras IIT Roorkee. This GATE EC 2007 examination is the procedure to get the admission in M.Tech

GATE Electronics and Communication i.e. EC Question Paper, This GATE EC 2007 Question will help all the students for their exam preparation, here the question type is MCQ i.e multiple choice question answers, if this GATE EC 2007 question paper in pdf file for GATE EC you can download it in FR EC, if GATE Electronics and Communication 2007 paper in text for GATE EC you can download GATE EC 2007 page also just Go to menu bar, Click on File->then Save.

GATE EC Question Paper 2007

GATE EC 2007 Question paper Free Download PDF is available in www.oldquestionpapers.net which has been provided by many students this GATE Electronics and Communication 2007 paper is available for all the students in FR EC and also GATE EC 2007 question paper fully solved i.e with answer keys and solution.

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1. X = 01110 and Y = 11001 are two 5-bit binary numbers represented in two’s complement format. The sum of X and Y represented in two’s complement format using 6 bits is

(a) 100111
(b) 001000
(c) 000111
(d) 101001

2. An examination consists of Iwo papers, Paper I and Paper 2. The probability of failing in Paper 1 is 0.3 and that in Paper 2 is 02. Given that a student has failed in Paper 2, the probability ol failing in Paper I is 0.6. The probability of a student failing in both the papers is

(n) 0.5
(1,) 0.18
(c) 0.12
(d) 0.06

3.In delta modulation, the slope overload distort ion can be reduced by

(a) decreasing the step S1Z@
(I;) decreasing the granular noise
(c) decreasing the sampling rae
(d) increasing the step size

4. The gLe o’de thickness in 11w MOS capwilor is

(a) 50 nm
(b) 143 nm
(c) 350 nm
(d) I m

5. The rnarnurn depiction layer width in silicon is

(a) 0143 irn
(b) 0.857 em
(c) I irn
(d) 1.143 im

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