GATE EC Question Paper 2011.
GATE i.e. Graduate Aptitude Test in Engineering Electronics and Communication 2011 Exam has been conducted by IISc Bangalore IIT Bombay IIT Delhi IIT Guwahati IIT Kanpur IIT Kharagpur IIT Madras IIT Roorkee. This GATE EC 2011 examination is the procedure to get the admission in M.Tech
GATE Electronics and Communication i.e. EC Question Paper, This GATE EC 2011 Question will help all the students for their exam preparation, here the question type is MCQ i.e multiple choice question answers, if this GATE EC 2011 question paper in pdf file for GATE EC you can download it in FR EC, if GATE Electronics and Communication 2011 paper in text for GATE EC you can download GATE EC 2011 page also just Go to menu bar, Click on File->then Save.
GATE EC Question Paper 2011
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1.Drift current in the semiconductors depends upon
(A) only the electric field
(B) only the carrier concentration gradient
(C) both the electric field and the carrier concentration
(D) both the electric field and the carrier concentration gradient
2. A Zener diode, when used in voltage stabilization circuits, is biased in
(A) reverse bias region below the breakdown voltage
(B) reverse breakdown region
(C) forward bias region
(D)forward bias constant current mode
3.The trigonometric Fourier series of an even function does not have the
(A) dc term
(B) cosine terms
(D)odd harmonic terms
4.A silicon PN junction is forward biased with a constant current at room temperature. When the temperature is increased by 100C, the forward bias voltage across the PN junction
(A) increases by 6OmV
(B) decreases by 6OmV
(C) increases by 25mV
(D)decreases by 25mV
5.A fair dice is tossed two times. The probability that the second toss results in a value that is higher than the first toss is