GATE EC Question Paper 2013.
GATE 2013 EC Question Paper with Answers Free Download PDF GATE Electronics And Communication Engineering (ECE) Exam 2013 Paper.
GATE i.e. Graduate Aptitude Test in Engineering Electronics and Communication 2013 Exam has been conducted by IISc Bangalore IIT Bombay IIT Delhi IIT Guwahati IIT Kanpur IIT Kharagpur IIT Madras IIT Roorkee. This GATE EC 2013 examination is the procedure to get the admission in M.Tech
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GATE EC Question Paper 2013
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in a forward biased pn junction diode, the sequence of events that best descnbes the mechanism of current flow is
(A) tnjection. and subsequent diffusion and recombination of minority earners
(B)1 injection, and subsequent dnft and generation of minority camers
(C) extraction, and subsequent diffusion and generation of minority carriers
(D) extraction, and subsequent dnft and recombination of minority carriers
In IC technology, dry oxidation (using dry oxygen) as compared to wet oxidation (using steam or water vapor) produces
(A) superior quality oxide with a higher growth rate
(B) inferior quality oxide with a higher growth rate
inferior quality oxide with a lower growth ratc
(D) superior quality oxide with a lower growth rate
In a MOSFET operatmg in the saturation region, the channel length modulation effect causes
(A) an increase in the gate-source capxitara
(8) a decrease in the tiansconductance
(C) a decrease in the unity-gain cutoff frequency
(D) a decrease in the output resistance