GATE EC Question Paper 2019-20
GATE 2019-20 EC Question Paper with Answers Free Download PDF GATE Electronics And Communication Engineering (ECE) Exam 2019-20 Paper.
GATE i.e. Graduate Aptitude Test in Engineering Electronics and Communication 2019-20 Exam has been conducted by IISc Bangalore IIT Bombay IIT Delhi IIT Guwahati IIT Kanpur IIT Kharagpur IIT Madras IIT Roorkee. This GATE EC 2019-20 examination is the procedure to get the admission in M.Tech
GATE Electronics and Communication i.e. EC Question Paper, This GATE EC 2019-20 Question will help all the students for their exam preparation, here the question type is MCQ i.e multiple choice question answers, if this GATE EC 2019-20 question paper in pdf file for GATE EC you can download it in FR EC, if GATE Electronics and Communication 2019-20 paper in text for GATE EC you can download GATE EC 2019-20 page also just Go to menu bar, Click on File->then Save.
GATE EC Question Paper 2019-20
GATE EC 2019-20 Question paper Free Download PDF is available in www.oldquestionpapers.net which has been provided by many students this GATE Electronics and Communication 2019-20 paper is available for all the students in FR EC and also GATE EC 2019-20 question paper fully solved i.e with answer keys and solution.
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in a forward biased pn junction diode, the sequence of events that best descnbes the mechanism of current flow is
(A) tnjection. and subsequent diffusion and recombination of minority earners
(B)1 injection, and subsequent dnft and generation of minority camers
(C) extraction, and subsequent diffusion and generation of minority carriers
(D) extraction, and subsequent dnft and recombination of minority carriers
In IC technology, dry oxidation (using dry oxygen) as compared to wet oxidation (using steam or water vapor) produces
(A) superior quality oxide with a higher growth rate
(B) inferior quality oxide with a higher growth rate
inferior quality oxide with a lower growth ratc
(D) superior quality oxide with a lower growth rate
In a MOSFET operatmg in the saturation region, the channel length modulation effect causes
(A) an increase in the gate-source capxitara
(8) a decrease in the tiansconductance
(C) a decrease in the unity-gain cutoff frequency
(D) a decrease in the output resistance
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