GATE EE Question Paper 2005.
GATE i.e. Graduate Aptitude Test in Engineering Electrical Engineering 2005 Exam Has been Conducted by IISc Bangalore IIT Bombay IIT Delhi IIT Guwahati IIT Kanpur IIT Kharagpur IIT Madras IIT Roorkee. This GATE EE 2005 examination is the procedure to get the admission in M.Tech
GATE Electrical Engineering i.e. EE Question Paper, This GATE EE 2005 Question will help all the students for their exam preparation, here the question type is MCQ i.e multiple choice question answers, if this GATE EE 2005 question paper in pdf file for GATE EE you can download it in FREE, if GATE Electrical Engineering 2005 paper in text for GATE EE you can download GATE EE 2005 page also just Go to menu bar, Click on File->then Save.
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GATE EE Question Paper 2005
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The insulation strength of an EHV transmission line is mainly governed by
a) load Power factor
(b) switching over-voltages
The conduction loss versus device current characteristic of a power MOSFET is best approximated by
(a) a parabola
(b) a straight line
(c) a rectangular hyperbola
(4) an exponentially decaying function
the positive sequence driving point reactance at the bus is
(a) 2.5 Q
(1) 4.033 Q
The power (or torque) angle is close to