GATE EC Question Paper 1993

GATE EC Question Paper 1993.

GATE i.e. Graduate Aptitude Test in Engineering Electronics and Communication 1993 Exam has been conducted by IISc Bangalore IIT Bombay IIT Delhi IIT Guwahati IIT Kanpur IIT Kharagpur IIT Madras IIT Roorkee. This GATE EC 1993 examination is the procedure to get the admission in M.Tech

GATE Electronics and Communication i.e. EC Question Paper, This GATE EC 1993 Question will help all the students for their exam preparation, here the question type is MCQ i.e multiple choice question answers, if this GATE EC 1993 question paper in pdf file for GATE EC you can download it in FR EC, if GATE Electronics and Communication 1993 paper in text for GATE EC you can download GATE EC 1993 page also just Go to menu bar, Click on File->then Save.

GATE EC 1993 Question paper Free Download PDF is available in which has been provided by many students this GATE Electronics and Communication 1993 paper is available for all the students in FR EC and also GATE EC 1993 question paper fully solved i.e with answer keys and solution.

GATE EC Question Paper 1993

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1. The temperature of an ideal gas is held constant white its volume is increased. The pressure exerted by the gas on the walls of the container decreases because its molecules

(a) strike the walls with smaller force
(1’) strike the walls with lower velocities
(c) strike the walls less frequently
(d) collide with each other more frequently

 2. Although a laser heam is highly directional, its beam width increases with propagation. This increase is due to

(a) coherence
c) polarization
(b) diffraction
(d) interference

3. Nuclear fusion reactions require very high temperatures so as to overcome.

(a) nuclear forces
(b) van der waaLs forces
(c) coulomb forces
(d) gravitational forces

4. In radioactive decay, the disintegration rate of the nuclei is

(a) constant at all times
(b) inversely proportional to half-life of the nuclei
(c) inversely proportional to the number of nuclei at any time
(d) directly proportional to the number of nuclei at any time

 5. The built-in potential (Diffusion Potential) in a p-n junction

(a) is equal to the difference in the Fermi level of the two sides, expressed in volts
(li) increases with the increase in the doping levels of the two sides
(c) increases with the increase in temperature
(d) is equal to the average of the Fermi levels of the two sides
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