GATE EC Question Paper 2006.
GATE i.e. Graduate Aptitude Test in Engineering Electronics and Communication 2006 Exam has been conducted by IISc Bangalore IIT Bombay IIT Delhi IIT Guwahati IIT Kanpur IIT Kharagpur IIT Madras IIT Roorkee. This GATE EC 2006 examination is the procedure to get the admission in M.Tech
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GATE EC Question Paper 2006
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1 . The concentration of minority carriers in a extrinsic semiconductor tinder equilibrium is
(a) directly proportional to the doping concentration
(b) inversely proportional to the doping concentration
(c) directly proportional to the concentration
(d) inversely proportional to the intrjnsj concentration
2. Under low level injection assumptions the ecj minority carrier current for an extrinsic semiconductor is essentially the
(a) diffusion current
(b) drift current
(L) recombination current
(d) induced current
3. The phenomenon known as “Early Effect” in a bipolar transistor refers to a reduction of the effective base-width caused by
(a) electron-hole recombination at the base
(b) the reverse biasing of the base-collector junction
(c) the forward biasing of emitter-base junction
(d) the early removal of stored base charge d taring saturation-to-cutoff switching
4. The (irsi and (he last critical frequencies (singularities) of a driving point impedance function of a passive network having two kinds of elements, are a pole and a zero respectively. The above property will be satisfied by
(a) RL network only
(b) RC network only
(c) LC network only
(ci) RC as well as RL networks