GATE EC Question Paper 2008.
GATE i.e. Graduate Aptitude Test in Engineering Electronics and Communication 2008 Exam has been conducted by IISc Bangalore IIT Bombay IIT Delhi IIT Guwahati IIT Kanpur IIT Kharagpur IIT Madras IIT Roorkee. This GATE EC 2008 examination is the procedure to get the admission in M.Tech
GATE Electronics and Communication i.e. EC Question Paper, This GATE EC 2008 Question will help all the students for their exam preparation, here the question type is MCQ i.e multiple choice question answers, if this GATE EC 2008 question paper in pdf file for GATE EC you can download it in FR EC, if GATE Electronics and Communication 2008 paper in text for GATE EC you can download GATE EC 2008 page also just Go to menu bar, Click on File->then Save.
GATE EC Question Paper 2008
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1.. Which of the fillowing is NOT associated with a p-n junction?
a) Junction Capacitance
(b) Charge Storage Capacitance
(c) Depletion Capacitance
(d) Channel Length Modulation
2. Which of the following is true?
(a) A silicon wafer heavily doped with boron is a p substrate
(b) A silicon wafer lightly doped with boron is a p substrate
(c) A silicon wafer heavily doped with arsenic is a p substrate
(d) A silicon wafer lightly doped with arsenic is a psubstrate
3 . For a Hertz dipole antenna, the half power beam width (HPBW) in the E-plane is
4. For static electric and magnetic fields in an inhomogeneous source-free medium, which of the following represents the correct form of two of Maxwel1s equations?
(a) V.E=0 VAB=0
(b) V.E=0 V.B =0
(c) VxE=0 VxB=O
(d) VxE=0 V.B=O
5. A silicon wafer has 100 nm of oxide on it and is inserted in a furnace at a temperature above 1000°C for further oxidation in dry oxygen. The oxidation rate
(a) is independent of current oxide thickness and temperature
(b) is independent of current oxide thickness but depends on temperature
(c) slows down as the oxide grows
(d) is zero as the existing oxide prevents further oxidation
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