GATE EC Question Paper 2010.
GATE i.e. Graduate Aptitude Test in Engineering Electronics and Communication 2010 Exam has been conducted by IISc Bangalore IIT Bombay IIT Delhi IIT Guwahati IIT Kanpur IIT Kharagpur IIT Madras IIT Roorkee. This GATE EC 2010 examination is the procedure to get the admission in M.Tech
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GATE EC Question Paper 2010
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1. For parallel RLC circuit, which one of the following statements is NOT correct?
(A) The bandwidth of the circuit deceases if R is increased
(B) The bandwidth of the circuit remains same if L is increased
(C) At resonance, input impedance is a real quantity
(D) At resonance, the magnitude of input impedance attains its minimum value.
2. Thin gate oxide in a CMOS process in preferably grown using
(A) wet oxidation
(B) dry oxidation
(C) epitaxial deposition
(D) ion implantation
3. For an N-point FFT algorithm with N = 2 which one of the following statements is TRUE?
(A) It is not possible to construct a signal flow graph with both input and output in normal order
(B) The number of butterflies in the mth stage is N/rn
(C) In-place computation requires storage of only 2N node data
(D) Computation of a butterfly requires only one complex multiplication