GATE Electronics Communication Question Paper 2014

GATE Electronics Communication Question Paper 2014.

GATE Electronics Communication EC 2014 Question Paper with Answers Free Download PDF GATE Electronics And Communication Engineering (EC) Exam 2014 Paper

GATE i.e. Graduate Aptitude Test in Engineering Electronics and Communication 2014 Exam has been conducted by IISc Bangalore IIT Bombay IIT Delhi IIT Guwahati IIT Kanpur IIT Kharagpur IIT Madras IIT Roorkee. This GATE EC 2014 examination is the procedure to get the admission in M.Tech

GATE Electronics and Communication i.e. EC Question Paper, This GATE EC 2014 Question will help all the students for their exam preparation, here the question type is MCQ i.e multiple choice question answers, if this GATE EC 2014 question paper in pdf file for GATE EC you can download it in FR EC, if GATE Electronics and Communication 2014 paper in text for GATE EC you can download GATE EC 2014 page also just Go to menu bar, Click on File->then Save.

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GATE Electronics Communication Question Paper 2014

If fixed positive charges are present in the gate oxide of an n-channel enhancement type MOSFET, it will lead to
(A) a decrease in the threshold voltage
(B) channel length modulation
(C) an increase in substrate leakage current
(D) an increase in accumulation capacitance

A good current buffer has
(A) low input impedance and low output impedance
(B) low input impedance and high output impedance
(C) high input impedance and low output impedance
(D) high input impedance and high output impedance

A 230 V rms source supplies power to two loads connected in parallel. The first load draws 10 kW at 0.8 leading power factor and the second one draws 10 kVA at 0.8 lagging power factor. The complex power delivered by the source is
(A) (18 + j 1.5) kVA
(B) (18 – j 1.5) kVA
(C) (20 + j 1.5) kVA
(D) (20 – j 1.5) kVA

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