GATE Electronics and Communication Engineering (EC) Previous Year Question Paper 2019
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GATE Electronics and Communication Engineering (EC) Question Papers 2019
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GATE Electronics and Communication Engineering (EC) Question Paper 2019 Download PDF File:
1. A region of negative differential resistance is observed in the current voltage characteristics of a silicon PN junction if
- (A) both the P-region and the N-region are heavily doped
- (B) the N-region is heavily doped compared to the P-region
- (C) the P-region is heavily doped compared to the N-region
- (D) an intrinsic silicon region is inserted between the P-region and the N-region
2. In an 8085 microprocessor, the shift registers which store the result of an addition and the overflow bit are, respectively
- (A) B and F
- (B) A and F
- (C) H and F
- (D) A and C
3. Negative feedback in a closed-loop control system DOES NOT
- (A) reduce the overall gain
- (B) reduce bandwidth
- (C) improve disturbance rejection
- (D) reduce sensitivity to parameter variation
4. Which one of the following processes is preferred to form the gate dielectric (SiO2) of MOSFETs ?
- (A) Sputtering
- (B) Molecular beam epitaxy
- (C) Wet oxidation
- (D) Dry oxidation
5. If the base width in a bipolar junction transistor is doubled, which one of the following statements will be TRUE?
- (A) Current gain will increase.
- (B) Unity gain frequency will increase.
- (C) Emitter-base junction capacitance will increase.
- (D) Early Voltage will increase.
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